STEW05CFN plastic encapsulate esd protection diodes elektronische bauelemente 27-jun-2011 rev. a page 1 of 2 http://www.secosgmbh.com any changes of specification will not be informed i ndividually. a b f g j h k e d d c l rohs compliant product a suffix of -c specifies halogen & lead-free description this dual unidirectional esd protector array family have been designed to protect sensitive equipment agains t esd in high speed transmission buses, operating at 5v. this dual array offers an integrated solution to pr otect up to 2 data lines in a unidirectional mode or, 1 data line in a bi-directional mode, in application where the boa rd space is a premium, in our wbfbp-03d package version. features iec61000-4-2 esd 15kv air, 8kv contact compliance low leakage current, maximum of 0.5 a at rated voltage maximum capacitance of 10pf per device at 0vdc 1mhz peak power dissipation of 20w 8/20 s waveform pin to pin compatible with standard wbfbp-03d in compliance with eu rohs 2002/95/ec directives mechanical data case:wbfbp-03d,molded plastic terminals: solderable per mil-std-750, method 2026 marking: package information package mpq leader size wbfbp-03d 8k 7 inch maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit peak pulse power (8/20 s waveform) p pp 20 w peak pulse current (8/20 s waveform) i ppm 2 a esd voltage (hbm per mil std883c-method 3015-6) v esd 20 kv operating temperature range t j -55 ~ 125 c storage temperature range t stg -55 ~ 150 c wbfbp-03d ref. millimeter ref. millimeter min. max. min. max. a 0.950 1.050 g - 0. 0 5 0 b 0.950 1.050 h 0. 510 0. 610 c 0. 010 0. 07 0 j 0.2 5 0 0.35 0 d 0.210 0.310 k - 0.050 e 0.350 ref. l 0.450 0.550 f 0.680 ref. af
STEW05CFN plastic encapsulate esd protection diodes elektronische bauelemente 27-jun-2011 rev. a page 2 of 2 http://www.secosgmbh.com any changes of specification will not be informed i ndividually. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit test condition working peak reverse voltage v rwm - - 5.0 v reverse breakdown voltage v br 6.2 - 7.2 v i br =1ma reverse leakage current i r - - 0.5 a v r =5v clamping voltage (8/20 s) v c - - 10 v i pp =2a typical junction capacitance 1 c j - 9 10 pf 0vdc bias f=1mhz between pin 1,2 to 3 (gnd) note: 1. capacitance between pins 1 and 2 is half of the value, in a bi-directional configuration. characteristic curves
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